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High-yield synthesis of silicon carbide nanowires by solar and lamp ablation
journal contribution
posted on 2023-05-17, 18:50 authored by Lu, H, Chan, BCY, Xiaolin WangXiaolin Wang, Chua, HT, Raston, CL, Albu-Yaron, A, Levy, M, Popowitz-Biro, R, Tenne, R, Feuermann, D, Gordon, JMWe report a reasonably high yield (~50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (~10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiO nanostructures—characterized by SEM, TEM, HRTEM, SAED, XRD and EDS—are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.
History
Publication title
NanotechnologyVolume
24Issue
33Article number
335603Number
335603Pagination
1-7ISSN
0957-4484Department/School
School of EngineeringPublisher
Iop Publishing LtdPlace of publication
Dirac House, Temple Back, Bristol, England, Bs1 6BeRights statement
Copyright 2013 IOP PublishingRepository Status
- Restricted