135741 - Anodic oxidations Excellent process durability and surface passivation.pdf (1.27 MB)
Anodic oxidations: excellent process durability and surface passivation for high efficiency silicon solar cells
journal contribution
posted on 2023-05-20, 08:16 authored by Grant, NE, Kho, TC, Fong, KC, Evan FranklinEvan Franklin, McIntosh, KR, Stocks, M, Wan, Y, Wang, EC, Zin, N, Murphy, JD, Blakers, AWe investigate the versatility of anodically grown silicon dioxide (SiO2) films in the context of process durability and exceptional surface passivation for high efficiency (>23%) silicon solar cell architectures. We show that a room temperature anodic oxidation can achieve a thickness of ~70 nm within ~30 min, comparable to the growth rate of a thermal oxide at 1000 °C. We demonstrate that anodic SiO2 films can mask against wet chemical silicon etching and high temperature phosphorus diffusions, thereby permitting a low thermal budget method to form patterned structures. We investigate the saturation current density J0 of anodic SiO2/silicon nitride stacks on phosphorus diffused and undiffused silicon and show that a J0 of <10 fA cm−2 can be achieved in both cases. Finally, to showcase the anodic SiO2 films on a device level, we employed the anodic SiO2/silicon nitride stack to passivate the rear surface of an interdigitated back contact solar cell, achieving an efficiency of 23.8%.
History
Publication title
Solar Energy Materials and Solar CellsVolume
203Article number
110155Number
110155Pagination
1-8ISSN
0927-0248Department/School
School of EngineeringPublisher
ElsevierPlace of publication
Amsterdam, NetherlandsRights statement
© 2019 The Authors. Published by Elsevier B.V. Licensed under Creative Commons Attribution 4.0 International (CC BY 4.0) http://creativecommons.org/licenses/by/4.0/Repository Status
- Open