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Anodic oxidations: excellent process durability and surface passivation for high efficiency silicon solar cells


Grant, NE and Kho, TC and Fong, KC and Franklin, E and McIntosh, KR and Stocks, M and Wan, Y and Wang, EC and Zin, N and Murphy, JD and Blakers, A, Anodic oxidations: excellent process durability and surface passivation for high efficiency silicon solar cells, Solar Energy Materials and Solar Cells, 203 Article 110155. ISSN 0927-0248 (2019) [Refereed Article]

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2019 The Authors. Published by Elsevier B.V. Licensed under Creative Commons Attribution 4.0 International (CC BY 4.0)

DOI: doi:10.1016/j.solmat.2019.110155


We investigate the versatility of anodically grown silicon dioxide (SiO2) films in the context of process durability and exceptional surface passivation for high efficiency (>23%) silicon solar cell architectures. We show that a room temperature anodic oxidation can achieve a thickness of ~70 nm within ~30 min, comparable to the growth rate of a thermal oxide at 1000 C. We demonstrate that anodic SiO2 films can mask against wet chemical silicon etching and high temperature phosphorus diffusions, thereby permitting a low thermal budget method to form patterned structures. We investigate the saturation current density J0 of anodic SiO2/silicon nitride stacks on phosphorus diffused and undiffused silicon and show that a J0 of <10 fA cm−2 can be achieved in both cases. Finally, to showcase the anodic SiO2 films on a device level, we employed the anodic SiO2/silicon nitride stack to passivate the rear surface of an interdigitated back contact solar cell, achieving an efficiency of 23.8%.

Item Details

Item Type:Refereed Article
Keywords:anodic oxidation, silicon, silicon dioxide, solar cell, surface passivation
Research Division:Engineering
Research Group:Electronics, sensors and digital hardware
Research Field:Photovoltaic devices (solar cells)
Objective Division:Energy
Objective Group:Renewable energy
Objective Field:Solar-photovoltaic energy
UTAS Author:Franklin, E (Associate Professor Evan Franklin)
ID Code:135741
Year Published:2019
Web of Science® Times Cited:3
Deposited By:Engineering
Deposited On:2019-11-12
Last Modified:2019-12-09
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