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High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

Citation

Lu, H and Chan, BCY and Wang, X and Chua, HT and Raston, CL and Albu-Yaron, A and Levy, M and Popowitz-Biro, R and Tenne, R and Feuermann, D and Gordon, JM, High-yield synthesis of silicon carbide nanowires by solar and lamp ablation, Nanotechnology, 24, (33) Article 335603. ISSN 0957-4484 (2013) [Refereed Article]

Copyright Statement

Copyright 2013 IOP Publishing

DOI: doi:10.1088/0957-4484/24/33/335603

Abstract

We report a reasonably high yield (~50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (~10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiO nanostructures—characterized by SEM, TEM, HRTEM, SAED, XRD and EDS—are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.

Item Details

Item Type:Refereed Article
Keywords:solar radiation, silicon carbide, photothermal ablation
Research Division:Engineering
Research Group:Mechanical Engineering
Research Field:Energy Generation, Conversion and Storage Engineering
Objective Division:Energy
Objective Group:Energy Storage, Distribution and Supply
Objective Field:Energy Storage, Distribution and Supply not elsewhere classified
Author:Wang, X (Associate Professor Xiaolin Wang)
ID Code:85641
Year Published:2013
Web of Science® Times Cited:12
Deposited By:Engineering
Deposited On:2013-07-25
Last Modified:2017-11-06
Downloads:0

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