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Novell EUV light sources for photolithography
Citation
Ohnishi, M and Hugrass, W and Miyake, Y and Shimizu, T and Hanatani, KE and Osawa, H, Novell EUV light sources for photolithography, Proceedings 2012 International Workshop on EUV Lithography, 4-8 June 2012, Maui, Hawaii EJ (2012) [Conference Extract]
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Abstract
Two novell devices to produce Extreme Ultra Violet (EUV) light for lithographic applications are being investigated at the Kansai Plasma Laboratory. The first is a Xe plasma produced discharge using 13.56 MHz rotating magnetic field. The second is a 2.45 GHz microwave plasma produced discharge. Both devices are debris-free and produce about 10 W EUV. The overall efficiency of these devices is 0.8 % and 3 %, respectively. Scaling of the experimental data from the first device shows increasing the input power brings about improvement in the efficiency such that the 100W EUV output needed for commercial applications can be generated for input power of about 3 kW.
Item Details
| Item Type: | Conference Extract |
|---|---|
| Research Division: | Physical Sciences |
| Research Group: | Nuclear and plasma physics |
| Research Field: | Plasma physics; fusion plasmas; electrical discharges |
| Objective Division: | Manufacturing |
| Objective Group: | Computer, electronic and communication equipment |
| Objective Field: | Integrated circuits and devices |
| UTAS Author: | Hugrass, W (Dr Waheed Hugrass) |
| ID Code: | 79879 |
| Year Published: | 2012 |
| Deposited By: | Information and Communication Technology |
| Deposited On: | 2012-10-09 |
| Last Modified: | 2012-10-09 |
| Downloads: | 0 |
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