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Novell EUV light sources for photolithography

Citation

Ohnishi, M and Hugrass, W and Miyake, Y and Shimizu, T and Hanatani, KE and Osawa, H, Novell EUV light sources for photolithography, Proceedings 2012 International Workshop on EUV Lithography, 4-8 June 2012, Maui, Hawaii EJ (2012) [Conference Extract]


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Abstract

Two novell devices to produce Extreme Ultra Violet (EUV) light for lithographic applications are being investigated at the Kansai Plasma Laboratory. The first is a Xe plasma produced discharge using 13.56 MHz rotating magnetic field. The second is a 2.45 GHz microwave plasma produced discharge. Both devices are debris-free and produce about 10 W EUV. The overall efficiency of these devices is 0.8 % and 3 %, respectively. Scaling of the experimental data from the first device shows increasing the input power brings about improvement in the efficiency such that the 100W EUV output needed for commercial applications can be generated for input power of about 3 kW.

Item Details

Item Type:Conference Extract
Research Division:Physical Sciences
Research Group:Atomic, Molecular, Nuclear, Particle and Plasma Physics
Research Field:Plasma Physics; Fusion Plasmas; Electrical Discharges
Objective Division:Manufacturing
Objective Group:Computer Hardware and Electronic Equipment
Objective Field:Integrated Circuits and Devices
Author:Hugrass, W (Dr Waheed Hugrass)
ID Code:79879
Year Published:2012
Deposited By:Computing and Information Systems
Deposited On:2012-10-09
Last Modified:2012-10-09
Downloads:0

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