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Exceptional silicon surface passivation by an ONO dielectric stack
Kho, TC and Fong, K and McIntosh, K and Franklin, E and Grant, N and Stocks, M and Phang, SP and Wan, Y and Wang, EC and Vora, K and Ngwe, Z and Blakers, A, Exceptional silicon surface passivation by an ONO dielectric stack, Solar Energy Materials and Solar Cells, 189 pp. 245-253. ISSN 0927-0248 (2019) [Refereed Article]
Copyright 2018 Elsevier B.V.
Immeasurably low surface recombination of crystalline-silicon wafers is demonstrated with an oxide-nitride-oxide (ONO) corona charged dielectric stack. We detail experimental variations to each layer of the dielectric stack to establish a procedure which provides outstanding passivation properties on textured and planar silicon wafers. We demonstrate surface recombination velocities of < 1 cm/s and surface recombination prefactors of < 1 fA/cm2, and we show that passivation remains stable over a 2-year period when stored in ambient conditions. The effective carrier lifetimes of n-type silicon are found to exceed the commonly accepted intrinsic lifetime limit, and in one case, a lifetime of 170 ms is attained. These high lifetimes indicate that ONO passivation is amongst the best dielectric passivation, and as such, might find applications in high-efficiency silicon solar cells.
|Item Type:||Refereed Article|
|Keywords:||solar-cells, substrate-temperature, corona discharges, carrier lifetime, charge, efficiency, nitride, density, recombination, hydrogen|
|Research Group:||Environmental engineering|
|Research Field:||Environmentally sustainable engineering|
|Objective Division:||Environmental Policy, Climate Change and Natural Hazards|
|Objective Group:||Environmental policy, legislation and standards|
|Objective Field:||Environmental protection frameworks (incl. economic incentives)|
|UTAS Author:||Franklin, E (Associate Professor Evan Franklin)|
|Web of Science® Times Cited:||8|
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