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Design and simulation of film bulk acoustic wave resonator in ku band

Citation

Nor, NIM and Shah, K and Singh, J and Sauli, Z, Design and simulation of film bulk acoustic wave resonator in ku band, Advanced Materials Research, 26-27 December 2012, Guilin, China, pp. 556-561. ISSN 1022-6680 (2013) [Refereed Conference Paper]

DOI: doi:10.4028/www.scientific.net/AMR.662.556

Abstract

This paper presents the design of a Film Bulk Acoustic Wave Resonators (FBARs) operating in Ku-band. The one-dimensional (1-D) numerical and the three-dimension (3-D) Finite Element Method (FEM) simulation results are analysed and compared. The results show that coupling coefficient (k2 eff) up to 6.5% can be obtained with optimised thickness ratio of electrode/piezoelectric layers of operating frequencies greater than 15GHz. The FBARs have areas of 1.69x10-4μm2 and 7.84x10-4μm2 for series resonance frequency of 14.7GHz and 15.9GHz respectively and achieves quality (Q) factor of 300. The designed FBAR filter operating in Ku-band has the centre frequency of 15.5 GHz, the insertion loss of 3.5dB, out-of-band rejection of 13dB and fractional bandwidth of 6.6%.

Item Details

Item Type:Refereed Conference Paper
Keywords:FBAR, FBAR filter, Ku-band, MEMS, RF
Research Division:Engineering
Research Group:Mechanical Engineering
Research Field:Microelectromechanical Systems (MEMS)
Objective Division:Expanding Knowledge
Objective Group:Expanding Knowledge
Objective Field:Expanding Knowledge in Technology
UTAS Author:Singh, J (Professor Jack Singh)
ID Code:110293
Year Published:2013
Web of Science® Times Cited:1
Deposited By:Research Division
Deposited On:2016-07-22
Last Modified:2016-07-22
Downloads:0

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